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The HMD5P2N15S is an N-Channel MOSFET manufactured by HY Electronic (Cayman) Limited. It features a Drain-Source Voltage of 150V and a Continuous Drain Current of 5.2A at TA=25°C. The device achieves a maximum Static Drain-Source On-Resistance of 53 mΩ at VGS=10V. Electrical characteristics include a Gate Threshold Voltage range of 2V to 4V, Input Capacitance of 1700 pF, and Total Gate Charge of 35.8 nC. The component is housed in a SOP-8 package with a Junction Temperature rating up to 150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size and quantity per box. Confirm RoHS compliance and halogen-free status requirements match project specifications. Ensure the SOP-8 package dimensions align with PCB layout constraints before finalizing procurement orders.
Select this component when a 150V N-Channel MOSFET with a continuous current rating of 5.2A is required. The low on-resistance makes it suitable for efficient power switching. Verify that the operating junction temperature remains within the specified limits during application testing.
This part belongs to the discrete semiconductor product category, specifically within the MOSFET segment. It is designed for surface-mount technology applications utilizing the SOP-8 package format. The manufacturer provides detailed electrical and thermal characteristics to support circuit design validation.
Consult official datasheets for direct substitutes. Verify pin compatibility and electrical ratings match exactly before considering alternative components.
The maximum static drain-source on-resistance is 53 mΩ at VGS = 10V.
The device utilizes a SOP-8 package.