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Product Detailed Parameters
- Description：HMF12N65S
- Series：-
- Mfr：HY Electronic (Cayman) Limited
- Package：Retail Package
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：51W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The HMF12N65S is an N-channel power MOSFET manufactured by HY Electronic (Cayman) Limited. It features a 650 V drain-source voltage rating and a continuous drain current of 12 A at ambient temperature. The device is housed in an ITO-220AB through-hole package, suitable for high-power applications. Key electrical parameters include a maximum on-resistance of 0.85 Ω and a total power dissipation capability of 51 W at ambient conditions. Additional specifications list a gate charge of 1480 nC and a thermal resistance value of 42 °C/W.
Feature Summary
- High-voltage N-channel construction for robust power switching
- Through-hole ITO-220AB packaging for secure mounting
- Optimized for efficient energy conversion in power circuits
Applications
- Power switching applications
- Industrial power supplies
- Motor control systems
Procurement Notes
Verify the specific datasheet version from HY Electronic to confirm exact thermal and electrical limits. Ensure the ITO-220AB footprint matches your PCB design requirements. Check RoHS compliance status if required by your manufacturing standards. Confirm active product status before finalizing component selection.
Selection Notes
Select this component when a 650 V rating and 12 A current capacity are required in a through-hole format. Consider the 0.85 Ω on-resistance for conduction loss calculations. Evaluate the 51 W power dissipation against your thermal management strategy. Compare with other N-channel MOSFETs if lower on-resistance or different packaging is needed.
Part Context
HY Electronic specializes in power discrete semiconductors, including rectifiers and MOSFETs. The HMF12N65S belongs to their high-voltage MOSFET lineup, designed for reliability in demanding environments. The company focuses on developing components for computer, telecom, and automotive sectors.
Replacement Considerations
Check for direct substitutes with identical 650 V/12 A ratings and ITO-220AB packages. Verify pinout compatibility and thermal characteristics before swapping. Cross-reference datasheets for any differences in gate charge or switching speed.
