HMPS-2825-TR2

RF Diode Overview

The HMPS-2825-TR2 is a dual parallel Schottky barrier diode from the Broadcom HMPS-282x series, housed in a MiniPak QFN surface-mount package. It features a minimum breakdown voltage of 15 V and a maximum forward voltage of 340 mV at 1 mA. The device exhibits a maximum reverse leakage current of 10 nA at 0 V bias and a maximum capacitance of 100 pF at 1 MHz. With an effective carrier lifetime of 100 ps maximum, it supports RF applications up to 6 GHz.

RF Diode Feature Summary

• Dual parallel configuration with matched diodes for consistent performance
• Ultra-miniature leadless MiniPak QFN packaging for reduced parasitics
• Low turn-on voltage and low series resistance characteristics
• High thermal conductivity for improved power dissipation

RF Diode Applications

• Mixing circuits operating at frequencies up to 6 GHz
• RF detection and sampling applications
• Switching and clamping functions in high-frequency designs
• Wave shaping in microwave transmission systems

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the reel quantity and tape orientation. Confirm that the component matches the MiniPak QFN package outline and electrical specifications required for the design. Ensure static discharge precautions are observed during handling and assembly processes.

RF Diode Selection Notes

Select this component when a dual parallel Schottky diode configuration is required within an ultra-miniature footprint. The MiniPak QFN package offers lower thermal resistance compared to conventional leaded diodes. Consider the 15 V peak inverse voltage rating and 100 pF maximum capacitance limits when designing for specific RF frequency ranges and power levels.

RF Diode Part Context

This part belongs to the HMPS-282x family of surface-mount RF Schottky barrier diodes manufactured by Broadcom Limited. The series includes single, anti-parallel, and parallel configurations available in both MiniPak 1412 and MiniPak QFN packages. These devices utilize ceramic-based or leadframe-based packaging technologies to ensure high reliability and consistent performance across semiconductor dice taken from adjacent wafer sites.

RF Diode Replacement Considerations

HMPS-2822-TR2 (Anti-parallel configuration)

RF Diode FAQ

What is the maximum effective carrier lifetime for the HMPS-2825?

The effective carrier lifetime is 100 ps maximum, measured using the Krakauer method at 5 mA.

How does the Vf match behave for diodes in pairs?

The difference in forward voltage (ΔVF) for diodes in pairs is limited to a maximum of 15 mV at 1 mA.

What is the typical dynamic resistance at 5 mA forward current?

The typical dynamic resistance is 1.0 Ω, calculated as RS + 5.2 Ω at 25°C and IF = 5 mA.