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The HN1C01FU-Y(T5L,F,T is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It features two independent NPN transistors housed in a US6 surface-mount package, which corresponds to the SC-88 or SOT-363 form factor. The device is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per element. It exhibits a transition frequency of 80MHz and a maximum power dissipation of 200mW at 25°C ambient temperature. The component supports a junction temperature up to 125°C and includes a minimum DC current gain (hFE) of 200 when tested at 2mA collector current and 6V collector-emitter voltage.
Verify the specific suffix Y against official Toshiba documentation to confirm binning or testing criteria differences compared to standard variants. Ensure the ordering code matches the required tape-and-reel quantity specifications for automated assembly lines. Cross-reference the manufacturer part number with distributor databases to confirm current production status and availability.
Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 200mW power dissipation limit against thermal requirements. Verify that the 50V voltage rating exceeds the maximum circuit operating voltage. Consider the US6 package dimensions for PCB layout constraints relative to alternative packages like SM6.
This part belongs to the HN1C01 series of dual NPN transistors from Toshiba. It shares core electrical characteristics with variants such as HN1C01F-GR but differs in packaging and specific ordering suffixes. The US6 package distinguishes it from larger surface-mount options, targeting space-constrained consumer electronics and mobile hardware designs.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba technical support for qualified alternatives if this specific suffix is unavailable.