HN1C01FU-Y(T5L,F,T

HN1C01FU-Y(T5L,F,T

  • Description:TRANS 2NPN DUAL 50V 150MA US6
  • Series:-

SKU:c382f50d3c11 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:200mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6
  • Grade:-
  • Qualification:-

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HN1C01FU-Y(T5L,F,T

Overview

The HN1C01FU-Y(T5L,F,T is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It features two independent NPN transistors housed in a US6 surface-mount package, which corresponds to the SC-88 or SOT-363 form factor. The device is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per element. It exhibits a transition frequency of 80MHz and a maximum power dissipation of 200mW at 25°C ambient temperature. The component supports a junction temperature up to 125°C and includes a minimum DC current gain (hFE) of 200 when tested at 2mA collector current and 6V collector-emitter voltage.

Feature Summary

  • Dual NPN configuration within a compact surface-mount package
  • High breakdown voltage capability for general-purpose switching
  • Optimized for high-frequency operation with specified transition frequency

Applications

  • General-purpose amplifier circuits
  • Switching applications in portable devices
  • Logic interface buffering

Procurement Notes

Verify the specific suffix Y against official Toshiba documentation to confirm binning or testing criteria differences compared to standard variants. Ensure the ordering code matches the required tape-and-reel quantity specifications for automated assembly lines. Cross-reference the manufacturer part number with distributor databases to confirm current production status and availability.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 200mW power dissipation limit against thermal requirements. Verify that the 50V voltage rating exceeds the maximum circuit operating voltage. Consider the US6 package dimensions for PCB layout constraints relative to alternative packages like SM6.

Part Context

This part belongs to the HN1C01 series of dual NPN transistors from Toshiba. It shares core electrical characteristics with variants such as HN1C01F-GR but differs in packaging and specific ordering suffixes. The US6 package distinguishes it from larger surface-mount options, targeting space-constrained consumer electronics and mobile hardware designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba technical support for qualified alternatives if this specific suffix is unavailable.

HN1C01FU-Y(T5L,F,THN1C01FU-Y(T5L,F,T

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