HP8JE5TB1

FET, MOSFET Arrays Overview

The HP8JE5TB1 is a dual P-channel power MOSFET from ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 12.5 A at case temperature (Tc) or 4.5 A at ambient temperature (Ta). The device exhibits a low on-resistance of 127 mOhms, with a gate-source voltage limit of ±20 V and a threshold voltage of 2.5 V. Gate charge is specified at 38 nC, while power dissipation reaches 21 W at Tc and 3 W at Ta. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration for efficient half-bridge or motor drive circuits
• Low on-resistance design minimizes conduction losses
• Enhancement mode operation with standard logic-compatible threshold levels

FET, MOSFET Arrays Applications

• Switching applications requiring high efficiency
• Motor drive circuits for DC motors
• Power management modules in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity. Confirm that the HSOP-8 package variant aligns with your PCB footprint requirements. Ensure thermal management strategies account for the lower ambient temperature power dissipation rating when designing enclosures. Cross-reference the datasheet version to confirm parameter consistency.

FET, MOSFET Arrays Selection Notes

Select this component for applications needing dual P-channel switching in a compact surface-mount form factor. The 100V rating suits medium-voltage systems, while the 12.5A current capacity supports moderate load demands. Consider the 127 mOhm on-resistance for thermal performance optimization in space-constrained designs where heat sinking is limited.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HP8J series of dual P-channel MOSFETs. The series is engineered for low on-resistance and fast switching speeds. The HP8JE5TB1 specifically targets applications like motor drives and general-purpose switching where compact packaging and high current density are critical design constraints.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 100V/12.5A dual P-channel specification and HSOP-8 package. Verify pinout compatibility and on-resistance values to ensure equivalent thermal and electrical performance in existing circuit layouts.