FET, MOSFET Arrays HP8KA1TB product image

HP8KA1TB

$1.50
  • Description:MOSFET 2N-CH 30V 14A 8HSOP
  • Series:-

SKU:981fa04b5e1e Category: Brand:

  
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HP8KA1TB is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 30V 14A 8HSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HP8KA1TB

  • Description:MOSFET 2N-CH 30V 14A 8HSOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:14A
  • Rds On (Max) @ Id, Vgs:5mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2550pF @ 15V
  • Power - Max:3W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-HSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for HP8KA1TB

HP8KA1TB

FET, MOSFET Arrays Overview

The HP8KA1TB is a dual N-channel power MOSFET with a common drain configuration housed in an HSOP8 package. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 14A. The typical on-resistance (R_DS(on)) is 5mΩ at V_GS=4.5V and 3.5mΩ at V_GS=10V. Total gate charge (Q_g) is 24nC, with a power dissipation (P_D) of 3W. The drive voltage is 4.5V, and it operates within a storage temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Low on-resistance for efficient power switching
  • Lead-free plating compliant with RoHS directives
  • Halogen-free construction

FET, MOSFET Arrays Applications

  • Load switches
  • Lithium battery charging circuits
  • Discharge switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm that the component meets RoHS compliance requirements for your target market. Check for any automotive qualification status if intended for vehicle electronics, as this model is generally not recommended for such use.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution with low R_DS(on) is required for 30V systems. Ensure the thermal management design supports the 3W power dissipation limit in the HSOP8 package. Verify that the gate drive voltage aligns with the specified 4.5V or 10V thresholds for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to Rohm Semiconductor's standard-grade power MOSFET lineup designed for surface mount applications. It utilizes the HSOP8 package code, which provides a compact footprint suitable for space-constrained designs. The product is classified as a standard level item and is distinct from automotive-grade variants.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes with identical pinouts and electrical ratings. Ensure any replacement maintains the HSOP8 package dimensions and thermal characteristics. Verify compatibility with existing PCB layouts and gate drive circuits.

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