HP8KC7TB1

FET, MOSFET Arrays Overview

The HP8KC7TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor in an HSOP-8 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 24 A. The device exhibits a low on-resistance of 8.8 mΩ at Vgs = 10 V, with a maximum gate-source voltage of ±20 V. Key switching parameters include a total gate charge of 10.8 nC, a typical turn-on delay time of 13 ns, and a fall time of 16 ns. The component supports a maximum power dissipation of 26 W and operates within a junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for synchronized switching applications
• Low on-resistance design optimized for high-efficiency power conversion
• Enhanced thermal performance with 26 W power dissipation capability

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Motor driver interfaces
• General-purpose switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TB1 against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure that the HSOP-8 footprint matches the target PCB layout dimensions. Cross-reference the RoHS compliance status directly with the latest product documentation before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required with a 60 V breakdown voltage. The 24 A current rating and 8.8 mΩ on-resistance make it suitable for moderate-to-high current switching loads. Verify that the 10.8 nC gate charge aligns with the driving circuit's capability to minimize switching losses effectively.

FET, MOSFET Arrays Part Context

This part belongs to the HP8KC series of dual N-channel MOSFETs from ROHM Semiconductor. The series is characterized by low on-resistance and is designed for surface-mount assembly. The HP8KC7TB1 variant specifically utilizes the HSOP-8 package to provide compact integration for power management systems requiring dual-channel control.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other ROHM dual N-channel MOSFETs in HSOP-8 packages with comparable 60 V ratings and similar on-resistance values. Verify pinout compatibility and thermal characteristics before substituting with components from other manufacturers.