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HP8KE6TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 100V 6A 8HSOP. Review the specifications below when checking this part for your BOM.
The HP8KE6TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor in an HSOP-8 surface-mount package. It features a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of ±17A at 25°C case temperature. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 54mΩ at VGS=10V and 73mΩ at VGS=4.5V. Total gate charge (Qg) is typically 6.7nC at VGS=10V and 3.7nC at VGS=4.5V. Power dissipation is rated at 21W, with an operating junction temperature range of -55°C to +150°C.
Verify the component against the official ROHM datasheet revision 002 dated April 26, 2023. Confirm that the marking on the package matches 'HP8KE6' and the packaging type corresponds to the embossed tape reel specification. Ensure the supplier provides traceability documentation consistent with ROHM manufacturing standards.
Select this component when a dual N-channel configuration is required within a compact footprint. Evaluate thermal resistance parameters, specifically RthJC of 5.8°C/W, to ensure adequate heat sinking for the 21W power dissipation rating. Verify that the drive voltage requirements align with the specified RDS(on) thresholds at 4.5V or 10V gate-source voltages.
This part belongs to the HP8KE6 series of dual N-channel MOSFETs from ROHM Semiconductor. It utilizes the HSOP-8 symmetry dual package format. The TB1 suffix indicates the specific taping code for the 330mm reel packaging containing 2500 pieces per unit.
Consult the ROHM product catalog for alternative parts within the HP8KE6 series or other dual N-channel MOSFETs offering compatible VDSS and ID ratings. Verify pinout compatibility and thermal characteristics before substituting.
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