HP8M51TB1

FET, MOSFET Arrays Overview

The HP8M51TB1 is a dual complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor within an HSOP-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 100 V and supports continuous drain currents up to 4.5 A. The device exhibits low on-resistance values of 170 mΩ for the N-channel and 290 mΩ for the P-channel at specified gate drive voltages. Key switching parameters include a total gate charge (Qg) ranging from 15 nC to 26.2 nC, with rise and fall times between 13 ns and 19 ns. It operates reliably across a temperature range of -55°C to +150°C with a power dissipation rating of 7 W.

FET, MOSFET Arrays Feature Summary

• Integrates N-channel and P-channel transistors in a single compact HSOP-8 package
• Supports high-voltage operation with a 100 V drain-source breakdown rating
• Optimized for fast switching applications with low gate charge and rapid transition times

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• Motor driver interfaces
• General-purpose switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'TB1' against the manufacturer's current datasheet to confirm packaging details and availability status. Ensure that the HSOP-8 footprint matches your PCB design constraints. Cross-reference RoHS compliance documentation directly with ROHM Semiconductor official records prior to finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a complementary N/P pair is required in a limited space without sacrificing voltage headroom. The 100 V rating provides margin for inductive loads or higher bus voltages compared to standard 60 V alternatives. Evaluate thermal management requirements carefully, as the 7 W dissipation limit in an HSOP-8 package necessitates adequate copper area for heat spreading during continuous operation.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HP series of complementary MOSFETs designed for efficient power switching. The HP8M51TB1 specifically targets applications requiring balanced performance between N-type and P-type devices within a small outline package. It serves as a solution for reducing component count and board space in power management topologies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify pin compatibility and electrical specifications before considering any alternative components from other manufacturers.