HP8MA2TB1

FET, MOSFET Arrays Overview

The HP8MA2TB1 is a complementary N-channel and P-channel power MOSFET array manufactured by ROHM Semiconductor. It features a surface-mount HSOP-8 package with a drain-source voltage rating of 30V. The device supports continuous drain currents of 18A for the N-channel and 15A for the P-channel at ambient temperature. On-resistance values are specified as low as 9.6mΩ for the N-channel and 17.9mΩ for the P-channel at Vgs=10V. Total gate charge reaches up to 25nC, with a maximum power dissipation of 3W at Ta and an operating junction temperature range extending to 150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N/P-channel configuration in a single compact surface-mount package
• Low on-resistance characteristics optimized for efficient switching applications
• Enhanced thermal performance supporting high junction temperatures up to 150°C

FET, MOSFET Arrays Applications

• Motor drive circuits requiring complementary switching elements
• DC/DC converter topologies utilizing synchronous rectification
• Battery protection boards and load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm RoHS compliance status and specific tape-and-reel packaging quantities prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and electrical integrity during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required within a limited footprint constraint. Evaluate thermal management capabilities carefully due to the 3W power dissipation limit at ambient temperature. Compare on-resistance specifications against circuit current demands to ensure acceptable conduction losses and switching efficiency in the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the HP8MA series of complementary MOSFETs from ROHM Semiconductor. It shares the HSOP-8 form factor with other devices in the lineup but differs in voltage ratings and current handling capabilities. The series targets general-purpose switching applications where space efficiency and matched channel characteristics are prioritized over high-voltage isolation.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include HP8MA2TR (tape reel variant) or HP8MA2CT (cut tape variant). Cross-brand replacements require matching 30V rating, HSOP-8 package, and comparable Rds(on) values. Verify pinout compatibility and thermal resistance parameters before implementation.