HP8MB5TB1

FET, MOSFET Arrays Overview

The HP8MB5TB1 is a complementary MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel configuration within a single HSOP-8 package. It supports a drain-source voltage of 40V with a continuous drain current rating of 6A. The device exhibits low on-resistance values of 46 mOhms at Vgs=10V. Key electrical characteristics include a total gate charge of 3.5 nC and a power dissipation capacity of 20W. Operating temperatures range from -55°C to +150°C, ensuring reliability in various thermal environments.

FET, MOSFET Arrays Feature Summary

• Complementary dual N-channel and P-channel configuration for efficient switching applications
• Low on-resistance design to minimize conduction losses
• Compact HSOP-8 surface mount package for space-constrained designs

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Motor driver interfaces
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TB1 indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the supplier provides valid traceability data matching the ROHM Semiconductor part number to avoid counterfeit risks during procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact complementary pair with moderate current handling capabilities. Evaluate thermal performance against the 20W dissipation limit under actual operating conditions. Compare gate charge specifications against drive circuit capabilities to ensure optimal switching speeds without excessive drive current requirements.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HSOP-8 MOSFET family, designed for general-purpose switching tasks. It complements other variants like the HP8KB5TB1, which offers higher current ratings but may differ in pinout or electrical parameters. Engineers should consult the specific datasheet for precise thermal resistance and switching timing details relevant to their PCB layout.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the HSOP-8 footprint and 40V/6A ratings. Verify that alternative complementary MOSFETs maintain similar Rds(on) and gate charge profiles to preserve existing circuit timing and efficiency characteristics without redesigning the gate drive network.