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HP8ME5TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N/P-CH 100V 3A 8HSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HP8ME5TB1
- Description：MOSFET N/P-CH 100V 3A 8HSOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
- Rds On (Max) @ Id, Vgs：193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.9nC @ 10V, 19.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：90pF @ 50V, 590pF @ 50V
- Power - Max：3W (Ta), 20W (Tc)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-HSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HP8ME5TB1
FET, MOSFET Arrays Overview
The HP8ME5TB1 is a dual-channel power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an HSOP-8 surface-mount package. The device supports a drain-source voltage of ±100V with continuous drain currents of ±8.5A for the N-channel and ±8.0A for the P-channel at 25°C case temperature. Maximum on-state resistances are specified at 193mΩ for the N-channel and 273mΩ for the P-channel. Total power dissipation reaches 20W, and the junction temperature range spans from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Low on-resistance design for improved switching efficiency
- High-power HSOP-8 package with back-side heat dissipation
- Pb-free plating compliant with RoHS directives
- Halogen-free construction
FET, MOSFET Arrays Applications
- Motor drives
- Switching applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Ensure storage conditions remain within recommended humidity and temperature limits to maintain solderability. Confirm that the specific TB1 taping code matches the required reel specifications for automated assembly processes.
FET, MOSFET Arrays Selection Notes
Evaluate thermal resistance parameters against the target application's ambient temperature requirements. Verify gate drive voltage compatibility with the specified threshold characteristics. Consider the maximum safe operating area curves when designing circuits subject to transient loads or pulsed current conditions.
FET, MOSFET Arrays Part Context
This component belongs to the HP8ME series of 100V dual MOSFETs designed for high-efficiency motor control and power switching. It utilizes a symmetry dual configuration to reduce installation area compared to discrete single-transistor solutions.
FET, MOSFET Arrays Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
