HP8S36TB

FET, MOSFET Arrays Overview

The HP8S36TB is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 27 A or 80 A depending on operating conditions. The device exhibits low on-resistance values of 2.4 mΩ and 8.8 mΩ at specified gate-source voltages. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage of 2.5 V, and a power dissipation capacity of 3 W. Operating temperatures span from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact HSOP-8 surface-mount package
• Low on-resistance characteristics suitable for efficient switching applications
• Enhancement mode operation with defined gate drive requirements

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Power supply output stages
• Motor driver interfaces

FET, MOSFET Arrays Procurement Notes

Verify the current lifecycle status before integration, as this component may be marked as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors and check for lead time constraints associated with end-of-life products. Ensure that the HSOP-8 package dimensions match the target PCB footprint and that thermal management strategies align with the 3 W power dissipation rating under expected load conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 30 V capability is required in an HSOP-8 package. Compare on-resistance and gate charge specifications against alternative devices to ensure compatibility with existing gate drive circuits. Consider the NRND status when planning long-term production runs and evaluate replacement options if new design approval is necessary.

FET, MOSFET Arrays Part Context

This part belongs to ROHM Semiconductor's lineup of silicon MOSFETs designed for surface-mount applications. The HSOP-8 package provides a symmetry dual configuration, allowing for compact board layout in dual-channel designs. It serves as a discrete solution for medium-power switching tasks where space efficiency and moderate current handling are prioritized.

FET, MOSFET Arrays Replacement Considerations

Consult official documentation for direct pin-compatible substitutes. Verify that any replacement maintains the 30 V Vds rating, HSOP-8 package type, and equivalent Rds(on) performance to ensure circuit functionality without redesign.