HS8MA2TCR1

FET, MOSFET Arrays Overview

The HS8MA2TCR1 is a drain-common complementary power MOSFET manufactured by ROHM Semiconductor, designed for existing customers rather than new designs. It integrates N-channel and P-channel transistors in a single DFN3333-9DC package with nine terminals. The device supports a drain-source voltage of 30V and delivers a continuous drain current of 7A. Typical on-resistance values are 0.04 ohms at 4.5V gate drive and 0.025 ohms at 10V gate drive. Total gate charge is 4.7nC, with a power dissipation rating of 4W. It operates within a storage temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Drain-common complementary configuration integrating N+P channels
• Low on-resistance for efficient power switching
• Compact surface-mount DFN3333L9 package
• RoHS compliant and lead-free plating

FET, MOSFET Arrays Applications

• Power management circuits for legacy systems
• Motor drive applications requiring complementary switching
• DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

This component is designated as Not Recommended for New Designs (NRND). Procurement is restricted to supporting existing customer production lines. Verify availability through authorized distributors or direct manufacturer channels, as supply may be limited to final time buy scenarios. Ensure design compatibility before ordering due to the non-recommended status.

FET, MOSFET Arrays Selection Notes

Select this part only for retrofitting or maintaining existing hardware where the HS8MA2TCR1 footprint and electrical characteristics are already established. For new projects, consider alternative ROHM complementary MOSFETs such as the QH8MA2TCR, which offers similar specifications but carries a recommended status for new designs. Evaluate thermal performance and package constraints carefully.

FET, MOSFET Arrays Part Context

The HS8MA2 series represents ROHM's complementary MOSFET lineup optimized for compact power applications. The TCR1 suffix indicates tape-and-reel packaging with a standard quantity. This specific variant utilizes the DFN3333L9 package, providing a small form factor suitable for space-constrained PCB layouts while maintaining adequate thermal dissipation capabilities for moderate power levels.

FET, MOSFET Arrays Replacement Considerations

The QS8M11A is listed as a similar level replacement with the same pinout and TSMT8 package. However, the HS8MA2TCR1 uses a DFN3333L9 package, so physical pinout compatibility must be verified against the datasheet. Electrical parameters differ slightly; check V_DSS, I_D, and R_DS(on) values to ensure circuit functionality remains intact.