RF Diode HSMP-481B-TR2G product image

HSMP-481B-TR2G

  • Description:RF DIODE PIN 100V SOT-323
  • Series:-

SKU:d8ba490c905c Category: Brand:

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HSMP-481B-TR2G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE PIN 100V SOT-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMP-481B-TR2G

  • Description:RF DIODE PIN 100V SOT-323
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):100V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:0.4pF @ 50V, 1MHz
  • Resistance @ If, F:3Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HSMP-481B-TR2G

HSMP-481B-TR2G

RF Diode Overview

The HSMP-481B-TR2G is a surface mount PIN diode manufactured by Broadcom Limited, designed for low distortion attenuating and microwave frequency operation. It features ultra-low parasitic inductance within the SOT-323 package. The device has a minimum breakdown voltage of 100 V and a maximum total capacitance of 0.4 pF at 50 V reverse bias. Series resistance is specified as 3 Ohms at 100 mA forward current and 100 MHz. Typical total inductance is 1 nH. The component operates within a temperature range of -65°C to +150°C and supports a maximum forward current of 1 A.

RF Diode Feature Summary

  • Optimized for low distortion attenuating applications
  • Ultra-low parasitic inductance suitable for microwave frequencies
  • Surface mount construction in SOT-323 package

RF Diode Applications

  • Low distortion attenuator circuits
  • Microwave frequency switching
  • Ultra-low distortion switching

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The TR2G suffix indicates tape and reel packaging containing 10,000 devices per 13-inch reel. Ensure compliance with RoHS standards and lead-free requirements during procurement. Confirm availability status directly with authorized distributors or the manufacturer before initiating orders.

RF Diode Selection Notes

Select this component when designing circuits requiring minimal parasitic inductance for high-frequency performance up to 3 GHz. The dual cathode configuration allows for series connection of both leads to further reduce inductance in microstrip layouts. Verify that the 100 V breakdown voltage meets the peak inverse voltage requirements of the target application environment.

RF Diode Part Context

This part belongs to the HSMP-481x series of surface mount RF PIN diodes. The series includes variants such as HSMP-4810 and HSMP-481B, distinguished by their internal lead configurations. The HSMP-481B specifically utilizes a dual cathode arrangement, enabling flexible circuit topologies for attenuators and switches in compact surface mount designs.

RF Diode Replacement Considerations

Direct substitutes include other parts from the HSMP-481x family, such as HSMP-4810-BLK or HSMP-481B-BLK, provided the package and electrical characteristics align with the design requirements.

HSMP-481B-TR2GHSMP-481B-TR2G

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