HSMS-282K-TR1G

RF Diode Overview

The HSMS-282K-TR1G is a surface mount RF Schottky barrier diode from the HSMS-282x series, manufactured by Broadcom Limited. It features a high isolation unconnected pair configuration housed in a six-lead SOT-363 package. The device utilizes silicon technology with a maximum breakdown voltage of 15 V and a forward current rating of 1 A. Key electrical specifications include a typical forward voltage of 340 mV at 0.5 mA, reverse leakage current of 100 nA at 10 V, and dynamic capacitance of 1 pF at 1 MHz. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• High Isolation Unconnected Pair Configuration
• Low Turn-On Voltage
• Six-sigma Quality Level
• Matched Diodes for Consistent Performance

RF Diode Applications

• DC biased small signal detectors up to 1.5 GHz
• Biased or unbiased large signal detectors (AGC or power monitors) up to 4 GHz
• Mixers and frequency multipliers up to 6 GHz
• Temperature compensated detector circuits requiring high isolation between reference and detector diodes

RF Diode Procurement Notes

Verify the specific ordering suffix TR1G corresponds to tape and reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure compatibility with standard surface mount assembly profiles, specifically observing maximum reflow temperatures not exceeding 235°C to prevent thermal damage during manufacturing processes.

RF Diode Selection Notes

Select this component when design requirements demand high isolation between two matched diodes within a compact footprint. The SOT-363 package provides superior thermal conductivity compared to smaller alternatives, supporting higher power dissipation. This part is suitable for applications where consistent performance across pairs is critical, such as differential detection schemes operating under varying thermal conditions.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes. The series offers various package configurations including single, dual, and quad versions to provide designer flexibility. While sharing the same underlying diode chip characteristics, different suffixes denote distinct internal configurations and pinouts tailored for specific analog and digital RF applications.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.