HSMS-282L-TR1

RF Diode Overview

The HSMS-282L-TR1 is a surface-mount RF Schottky barrier diode manufactured by Broadcom Limited, housed in an SOT-363 package. It contains three unconnected diodes configured as a trio. The device features a breakdown voltage of 15 V and a forward voltage of 340 mV at 0.5 mA. Dynamic resistance is specified at 12 ohms at 5 mA and 1 MHz, with junction capacitance at 1 pF at 0 V and 1 MHz. Reverse leakage current is limited to 100 nA at 15 V. Operating temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Low turn-on voltage for efficient signal detection
• Six-sigma quality level ensuring consistent performance
• Matched diodes fabricated from adjacent wafer sites
• Unique configurations in the SOT-363 package

RF Diode Applications

• Mixing applications up to 6 GHz
• Detecting and sampling circuits
• Clamping and wave shaping
• Small signal detectors biased with DC current

RF Diode Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeits. Confirm RoHS compliance status and check for End-of-Life notices or Product Change Notifications before finalizing procurement plans. Ensure storage conditions meet moisture sensitivity requirements.

RF Diode Selection Notes

Select this part when a compact SOT-363 footprint is required for multiple independent diodes. Consider thermal resistance characteristics for power dissipation limits. Evaluate series resistance and capacitance values against specific RF frequency requirements.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes. The family offers various package configurations including single, dual, and quad versions. All variants utilize the same silicon die but differ in internal connectivity and packaging to suit different circuit layouts.

RF Diode Replacement Considerations

HSMS-282M-TR1G

RF Diode FAQ

What is the configuration of the HSMS-282L-TR1?

It is an unconnected trio containing three separate diodes within a single SOT-363 package.

How are matched diodes ensured in pairs and quads?

Manufacturing techniques ensure dice are taken from adjacent sites on the wafer, providing a high degree of match.

What is the maximum junction temperature?

The maximum junction temperature is 150°C under all operating conditions.