RF Diode HSMS-282N-TR1G product image

HSMS-282N-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-

SKU:a71b919afd16 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

HSMS-282N-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-363. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282N-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 2 Pair Common Anode
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363

RF Diode datasheet and documents for HSMS-282N-TR1G

HSMS-282N-TR1G

RF Diode Overview

The HSMS-282N-TR1G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited, housed in an SOT-363-6 package. It features a Quad Common Anode configuration with silicon technology. Key electrical specifications include a breakdown voltage of 15 V, a forward voltage of 340 mV at 0.5 mA, and a reverse leakage current of 100 nA at 10 V. The device exhibits a dynamic resistance of 12 Ω and operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Quad Common Anode configuration for flexible circuit integration
  • Low series resistance and low forward voltage characteristics
  • High degree of matching between internal diodes due to adjacent wafer site manufacturing
  • Enhanced thermal conductivity via copper leadframe design

RF Diode Applications

  • Mixing applications up to 6 GHz
  • Detecting circuits including small signal detectors
  • Switching and sampling operations
  • Clamping and wave shaping functions

RF Diode Procurement Notes

Verify component authenticity through authorized channels as the HSMS-282N-TR1G may be subject to obsolescence notices. Confirm RoHS compliance status and check for Product Change Notices (PCN) prior to finalizing procurement plans. Ensure supply chain stability given potential discontinuation risks associated with legacy semiconductor lines.

RF Diode Selection Notes

Select this component when a quad common anode topology is required for RF mixer or detector designs. The SOT-363 package offers board space savings compared to larger SOT-143 variants while maintaining superior thermal dissipation capabilities. Verify that the 15 V breakdown voltage meets system requirements for peak inverse voltage conditions.

RF Diode Part Context

This part belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies. The series provides various configurations including single, dual, and quad versions optimized for analog and digital RF applications. Broadcom acquired the semiconductor division containing this product line, continuing support for these established RF components.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer resources for cross-reference data or evaluate alternative packages within the same HSMS-282x family if pin compatibility is required.

HSMS-282N-TR1GHSMS-282N-TR1G

Click on the inquiry