HSMS-282R-BLKG

RF Diode Overview

The HSMS-282R-BLKG is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a Ring Quad configuration within an SOT-363 package. The device operates with a maximum breakdown voltage of 15 V and a forward current rating of 1 A. Key electrical parameters include a typical forward voltage of 340 mV at 1 mA, reverse leakage current of 100 nA at 15 V, and junction capacitance of 1 pF. Dynamic resistance is typically 12 Ω. The component supports a junction temperature up to 150°C and functions within an operating range of -65°C to +150°C.

RF Diode Feature Summary

• Ring quad configuration for balanced mixer applications
• Low series resistance and forward voltage
• High degree of diode matching from adjacent wafer sites

RF Diode Applications

• Double balanced mixers
• Frequency multipliers
• Sampling circuits

RF Diode Procurement Notes

Verify the specific manufacturer source and authenticity before integration. Confirm that the SOT-363 footprint matches the design requirements. Check for RoHS compliance status as indicated in official documentation. Ensure handling precautions are followed due to ESD sensitivity.

RF Diode Selection Notes

Select this part when a ring quad topology is required for mixer designs. The SOT-363 package offers space savings compared to larger packages. Verify thermal management capabilities given the thermal resistance specifications. Ensure the 15 V breakdown voltage meets circuit requirements.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky diodes. The family provides various configurations including single, dual, and quad versions. The HSMS-282R specifically utilizes the ring quad arrangement optimized for high-frequency mixing tasks.

RF Diode Replacement Considerations

HSMS-2827 serves as a functional equivalent in the SOT-143 package.