HT8KB6TB1

$1.67

Description：MOSFET 2N-CH 40V 8A 8HSMT
Series：-

SKU:7e9797d34781 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

HT8KB6TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 40V 8A 8HSMT. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HT8KB6TB1

Description：MOSFET 2N-CH 40V 8A 8HSMT
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs：17.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：530pF @ 20V
Power - Max：2W (Ta), 14W (Tc)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-HSMT (3.2x3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for HT8KB6TB1

HT8KB6TB1

FET, MOSFET Arrays Overview

The HT8KB6TB1 is a dual N-channel power MOSFET from ROHM Semiconductor, housed in an HSMT8 (Symmetry Dual) surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current of 15A. The device exhibits low on-resistance, with typical values of 0.021Ω at VGS=4.5V and 0.0133Ω at VGS=10V. Total gate charge is typically 5nC, and power dissipation capacity is 2W. Operating temperatures range from -55°C to 150°C storage.

FET, MOSFET Arrays Feature Summary

Low on-resistance design for efficient switching performance
High-power density in a compact HSMT8 small mold package
Lead-free plating compliant with RoHS standards and halogen-free

FET, MOSFET Arrays Applications

General switching applications
Motor drive circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TB1 to confirm taping packaging format and 3000-unit reel quantity. Confirm RoHS compliance and halogen-free status through official datasheets or certificates of conformity before procurement. Ensure the component meets standard-grade requirements and is not intended for automotive use.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel configuration in a minimal footprint. Compare RDS(on) at 4.5V and 10V drive voltages against circuit requirements. Evaluate thermal management needs given the 2W power dissipation limit in the HSMT8 package. Verify compatibility with system operating temperature ranges.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HSMT8 series of dual MOSFETs, designed for high-density PCB layouts. It serves as a successor or alternative to older SOP8 packages like SH8K26, offering improved current handling and lower resistance in a smaller form factor suitable for portable and space-constrained electronics.