HT8KC6TB1

FET, MOSFET Arrays Overview

The HT8KC6TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSMT-8 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 15 A. The device exhibits low on-resistance values of 31 mΩ at VGS = 4.5 V and 23 mΩ at VGS = 10 V. Key electrical parameters include a total gate charge of 3.9 nC and a power dissipation capability of 14 W. The component operates within a temperature range of -55°C to +150°C and utilizes enhancement mode operation for efficient switching applications.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact HSMT-8 symmetric dual package
• Low on-resistance characteristics optimized for high-efficiency switching performance
• Enhanced thermal stability supporting operation up to 150°C junction temperature

FET, MOSFET Arrays Applications

• General purpose switching circuits requiring low conduction losses
• Power management modules in consumer electronics
• Industrial control systems utilizing surface mount technology

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TB1 against official ROHM documentation to confirm tape and reel packaging specifications. Ensure compatibility with HSMT-8 footprint dimensions during PCB layout. Cross-reference datasheet revisions to validate electrical parameter tolerances before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Compare RDS(on) values at intended drive voltages against alternative packages. Confirm that the 15 A current rating aligns with peak load requirements while accounting for thermal derating curves provided in the official datasheet.

FET, MOSFET Arrays Part Context

This part belongs to the HT8KC series of low on-resistance MOSFETs designed for switching applications. The HSMT-8 package provides a standardized form factor for dual transistor integration. It serves as a discrete solution for power stages where space constraints limit the use of larger packages.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 60V/15A rating and HSMT-8 package. Verify pinout compatibility and thermal resistance characteristics. Consult manufacturer cross-reference lists for confirmed equivalent parts with identical electrical specifications.