HT8KE6HTB1

FET, MOSFET Arrays Overview

The HT8KE6HTB1 is a dual N-channel power MOSFET from ROHM Semiconductor, housed in the HSMT8 surface-mount package. It features a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 12.5A. The device exhibits low on-resistance, with typical values of 0.059Ω at V_GS=6V and 0.047Ω at V_GS=10V. Total gate charge (Q_g) is 4.2nC, and power dissipation (P_D) is rated at 14W. Operating temperatures range from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact HSMT8 mold package
• Low on-resistance for efficient switching performance
• Lead-free plating compliant with RoHS directives
• Halogen-free construction

FET, MOSFET Arrays Applications

• General switching applications
• Motor drive circuits

FET, MOSFET Arrays Procurement Notes

Verify the ordering part number HT8KE6HTB1 against official ROHM documentation to ensure correct package code HSMT8 and tape-and-reel packaging quantity of 3000 units. Confirm that the component status is listed as recommended for new designs and check for any specific automotive restrictions noted in the datasheet before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a 100V rating with high current capacity in a small footprint. The dual channel design allows for bridge or half-bridge configurations. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low R_DS(on) values. Consider the 14W power dissipation limit and thermal management requirements for the HSMT8 package during operation.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's standard-grade power MOSFET lineup designed for general-purpose use. It is explicitly not recommended for automotive equipment. The HSMT8 package provides a symmetry dual configuration, optimizing board space compared to single-channel alternatives with similar electrical characteristics.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters with alternative dual N-channel MOSFETs if sourcing changes occur.