HUF75831SK8T

Single FETs, MOSFETs Overview

The HUF75831SK8T is a surface-mount N-channel MOSFET from the UltraFET series, manufactured by onsemi (formerly Fairchild Semiconductor). It features an 8-SOIC package with a drain-source voltage rating of 100 V and a continuous drain current of 5.5 A at ambient temperature. The device exhibits a maximum on-resistance of 26 milliohms at 10 V gate drive. Key electrical characteristics include a maximum gate charge of 94 nC at 20 V and a maximum input capacitance of 1480 pF at 25 V. The component operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5 W.

Single FETs, MOSFETs Feature Summary

• UltraFET technology provides low on-resistance for improved efficiency in switching applications.
• Enhanced dv/dt rating reduces susceptibility to false turn-on events.
• Lead-free packaging ensures compliance with RoHS environmental standards.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as the part was originally developed by Fairchild Semiconductor and is now produced by onsemi following corporate acquisition. Confirm that the specific suffix matches the required tape-and-reel packaging configuration. Ensure that design-in documentation references the correct datasheet version associated with the current production facility to guarantee parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with moderate current handling is required in an 8-pin SOIC footprint. Evaluate thermal performance against the 2.5 W dissipation limit under expected load conditions. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive losses. Verify that the package width and pin pitch align with the target PCB layout constraints.

Single FETs, MOSFETs Part Context

This device belongs to the HUF75 series of high-performance MOSFETs designed for general-purpose power switching. The series utilizes advanced planar trench technology to achieve low specific on-resistance. The HUF75831 variant specifically targets applications requiring balanced performance between conduction losses and switching speeds in compact surface-mount designs.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference verification should be conducted using official manufacturer tools to identify equivalent devices with matching voltage, current, and package specifications.