Single FETs, MOSFETs HUF76139S3 product image

HUF76139S3

$1.27
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk

SKU:c57d33d9505a Category: Brand:

  
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HUF76139S3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76139S3

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:I2PAK (TO-262)
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for HUF76139S3

HUF76139S3

Single FETs, MOSFETs Overview

The HUF76139S3 is a single N-Channel Power MOSFET manufactured by Harris Corporation, part of the UltraFET series. It utilizes silicon technology and features a TO-263AB-3 (D2PAK) surface-mount package. The device is rated for a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 75 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 10 mΩ and a gate charge (Qg) of 84 nC. It operates within a junction temperature range of -55°C to +175°C with a power dissipation capability of 180 W.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive capability for efficient control
  • UltraFET technology for low conduction losses
  • Enhanced thermal performance via D2PAK packaging

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the HUF prefix was originally associated with Harris Semiconductor before its acquisition by Intersil, which was subsequently acquired by Renesas Electronics. Ensure the component matches the specific datasheet requirements for the intended application, particularly regarding the 60V rating and 75A current capacity. Confirm RoHS compliance status if required by your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when a high-current, low-voltage N-Channel MOSFET is required in a surface-mount package. The 60V rating suits lower voltage bus applications compared to higher voltage variants like the 100V HUF75639S3. The TO-263AB-3 package offers a balance between current handling and board space efficiency. Consider the 10 mΩ Rds(on) for thermal management needs in high-efficiency designs.

Single FETs, MOSFETs Part Context

This component belongs to the HUF76xxx series of UltraFET Power MOSFETs. These devices are designed for general-purpose power switching applications requiring high current density. The series typically includes various voltage ratings and package options to accommodate different design constraints. The HUF76139S3 specifically targets 60V applications within this lineup.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents from Renesas or other manufacturers offering similar 60V, 75A N-Channel MOSFETs in TO-263 packages. Verify pinout compatibility and electrical parameter overlaps before substitution.

HUF76139S3HUF76139S3
$1.27
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