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HUFA75321D3STQ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 55V 20A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HUFA75321D3STQ
- Description：MOSFET N-CH 55V 20A
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HUFA75321D3STQ
FET, MOSFET Arrays Overview
The HUFA75321D3STQ is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a 55V drain-source voltage rating and a continuous drain current of 20A. The device utilizes through-hole TO-220-3 packaging with a maximum power dissipation of 93W. Key electrical parameters include a typical on-resistance of 36 milliohms, a gate-source voltage range of -20V to +20V, and a junction temperature operating range from -55°C to +175°C. Switching characteristics include a typical turn-on delay of 11ns and a fall time of 66ns.
FET, MOSFET Arrays Feature Summary
- Utilizes UltraFET process technology for low on-resistance per unit silicon area
- Capable of withstanding high energy in the avalanche mode
- Features a diode with very low reverse recovery time and stored charge
FET, MOSFET Arrays Applications
- Switching regulators
- Motor drivers
- Relay drivers
- Low voltage bus switches
FET, MOSFET Arrays Procurement Notes
Verify component authenticity due to potential availability constraints. Confirm package integrity upon receipt as the TO-220-3 housing may be susceptible to mechanical stress during transit. Ensure storage conditions maintain moisture sensitivity levels appropriate for leaded packages. Cross-reference datasheet revisions to confirm pinout compatibility with existing designs before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a robust through-hole solution is required for 55V applications. The TO-220-3 package facilitates efficient heat dissipation for moderate power levels up to 93W. Consider the specific switching speed requirements against the 66ns fall time. Evaluate thermal management needs based on the 36 milliohm on-resistance at expected load currents.
FET, MOSFET Arrays Part Context
This part belongs to the UltraFET family of power MOSFETs designed for high-efficiency power conversion. The D3 suffix indicates the specific TO-220-3 through-hole package variant. Fairchild Semiconductor developed this series to optimize the trade-off between conduction losses and switching performance for general-purpose power switching applications.
FET, MOSFET Arrays Replacement Considerations
The HUF75321P3 is a documented similar specification part within the same product family. Verify pin compatibility and thermal resistance differences before substitution. Ensure the replacement meets the same 55V and 20A ratings.
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