HUFA75639S3ST

Single FETs, MOSFETs Overview

The HUFA75639S3ST is a single N-channel UltraFET MOSFET manufactured by onsemi, utilizing silicon technology. It features a D2PAK-3 (TO-263-3) surface-mount package with a continuous drain current of 56 A and a drain-source breakdown voltage of 100 V. The device exhibits a maximum on-resistance of 25 mΩ at 10 V gate drive. Electrical characteristics include a gate threshold voltage of 4 V, total gate charge of 110 nC, and power dissipation of 200 W. Operating temperatures range from -55 °C to +175 °C. The component meets AEC-Q100 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in demanding environments.
• UltraFET technology architecture designed to deliver low conduction losses through minimized on-resistance.
• Enhanced thermal management capabilities supported by a high-power dissipation rating and extended junction temperature tolerance.

Single FETs, MOSFETs Applications

• Automotive power distribution systems requiring high current handling
• DC-to-DC converter circuits for efficient voltage regulation
• Motor control applications involving N-channel switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as this specific part number is officially attributed to onsemi rather than Fairchild Semiconductor. Confirm that the D2PAK-3 package variant matches your PCB footprint requirements. Ensure compatibility with the specified 100 V drain-source voltage and 56 A continuous current limits for your circuit design. Check for end-of-life status or obsolescence notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified N-channel MOSFET is required for high-current applications. The 100 V rating suits medium-voltage DC systems, while the 25 mΩ on-resistance supports efficiency goals. Verify that the SMD mounting style fits the assembly process. Consider the 200 W power dissipation capability for thermal design constraints within the target enclosure.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET family of power transistors, which integrates advanced cell structures for improved performance. While often associated with broader semiconductor portfolios, this specific part is produced by onsemi. It serves as a surface-mount alternative to through-hole variants like the HUFA75639P3, offering similar electrical specifications in a compact form factor suitable for automated assembly.

Single FETs, MOSFETs Replacement Considerations

The HUFA75639P3 is a verified through-hole replacement option within the same product family, sharing identical electrical parameters including 100 V rating and 25 mΩ resistance. Ensure the PCB layout accommodates the different package type during substitution.