HUFA76404DK8T

FET, MOSFET Arrays Overview

The HUFA76404DK8T is an N-Channel Dual MOSFET manufactured by onsemi, housed in a surface-mount SO-8 package. It features a drain-to-source voltage (VDS) of 62 V and a continuous drain current (ID) of 3.2 A at VGS = 5 V. The typical drain-to-source on-resistance (rDS(ON)) is 110 mΩ at VGS = 5 V and ID = 3.2 A. Total gate charge (Qg(tot)) is typically 3.8 nC at VGS = 5 V. The device includes an internal gate resistance (RG) of 100 Ω and supports single-pulse avalanche energy up to 128 mJ. Operating junction temperature ranges from -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with low Miller charge and low body diode reverse recovery charge for optimized high-frequency efficiency.
• Integrated internal gate resistance of 100 Ω to control switching speed and minimize ringing.
• Qualified to AEC-Q101 standards for automotive reliability requirements.
• Capable of handling unclamped inductive switching (UIS) events for both single and repetitive pulses.

FET, MOSFET Arrays Applications

• Motor and body load control systems
• Anti-lock braking system (ABS) circuits
• Powertrain management modules
• Fuel injection systems
• DC-DC converters and off-line UPS units

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi, noting that onsemi acquired Fairchild's power division. Confirm the specific suffix DK8T corresponds to the SO-8 tape and reel packaging containing 2500 units per 330mm reel. Ensure the component marking matches '76404DK8' to validate authenticity against counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required for 12V or 24V primary switching applications. The 62V rating provides margin for automotive transients. The integrated 100Ω gate resistor simplifies driver design by reducing external component count. Verify thermal constraints based on the specific copper pad area used on the PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to the UltraFET series of power MOSFETs designed for automotive and industrial environments. It represents a transition period where Fairchild Semiconductor branding was still present on datasheets prior to full integration into onsemi's portfolio. The SO-8 package allows for compact board layouts compared to through-hole alternatives.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference lists from onsemi or verify pin-compatible alternatives with matching VDS, ID, and rDS(ON) specifications.

FET, MOSFET Arrays FAQ

What is the maximum single pulse avalanche energy?

The device can withstand a single pulse avalanche energy of 128 mJ, starting at a junction temperature of 25°C, with an inductance of 41mH and avalanche current of 2.5A.

How does the internal gate resistance affect performance?

The internal RG of 100Ω helps dampen oscillations and controls the switching speed, which reduces electromagnetic interference (EMI) and protects the gate oxide from voltage spikes during fast switching transitions.

What is the reverse recovery time of the body diode?

The reverse recovery time (trr) is typically 37 ns when tested with a source-to-drain current of 3.6A and a rate of change of current (dISD/dt) of 100A/µs.