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HUFA76407DK8TF085P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 3.8A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HUFA76407DK8TF085P
- Description：MOSFET 2N-CH 60V 3.8A 8SOIC
- Series：UltraFET™
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 25V
- Power - Max：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HUFA76407DK8TF085P
FET, MOSFET Arrays Overview
The HUFA76407DK8TF085P is a dual N-channel MOSFET array from onsemi's UltraFET series. It features a 60V drain-source voltage rating and a continuous drain current of 3.8A at ambient temperature. The device delivers 2.5W of power dissipation capability in an 8-SOIC surface-mount package. Designed for switching and amplification applications, it integrates two independent channels within a single compact footprint to simplify circuit layouts.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for integrated switching solutions
- UltraFET technology optimized for efficiency
- Surface-mount 8-SOIC packaging for automated assembly
FET, MOSFET Arrays Applications
- Switching circuits requiring dual channel control
- Amplification applications utilizing dual FET arrays
- Power management modules needing compact dual-switch integration
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix DK8TF085P against official onsemi documentation to ensure correct tape-and-reel specifications and marking codes. Confirm that the 8-SOIC package dimensions match the target PCB footprint requirements before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel topology is required within a limited board area. The 60V rating suits low-voltage DC-DC converters and load switches. Ensure thermal management strategies account for the 2.5W dissipation limit in the SOIC package during high-current operation phases.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's UltraFET series, which focuses on high-efficiency power switching. As a discrete semiconductor product, it falls under the FET and MOSFET Arrays category. It complements other onsemi components by providing integrated dual-channel functionality for simplified system designs.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other onsemi dual N-channel MOSFETs in the 8-SOIC package. Verify pin compatibility and electrical ratings such as Rds(on) and Vgs thresholds before substituting with alternative part numbers from the same manufacturer family.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
