HUFA76413DK8T-F085

FET, MOSFET Arrays Overview

The HUFA76413DK8T-F085 is an N-Channel Logic Level UltraFET power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and continuous drain currents of 5.1 A at VGS = 10 V and 4.8 A at VGS = 5 V, both measured at TC = 25 °C. The device exhibits ultra-low on-resistance, specified as a maximum of 0.049 Ω at VGS = 10 V and 0.056 Ω at VGS = 5 V. It operates within a junction temperature range of -55 °C to +150 °C and supports single-pulse avalanche energy up to 260 mJ. The component is housed in an SO-8 package with a thermal resistance (RθJA) of 50 °C/W under standard mounting conditions.

FET, MOSFET Arrays Feature Summary

• Utilizes UltraFET process technology for optimized on-resistance per silicon area
• Capable of withstanding high energy in avalanche mode
• Features low reverse recovery time and stored charge in the body diode
• Qualified to AEC-Q101 standards for automotive applications

FET, MOSFET Arrays Applications

• Motor and load control circuits
• Powertrain management systems
• Switching regulators and converters
• Relay drivers and low-voltage bus switches
• Power management in portable and battery-operated products

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the F085 designation aligns with current manufacturing sources and packaging specifications. Ensure compliance with RoHS requirements and confirm the package marking matches the expected device identifier. Validate all electrical parameters against the latest datasheet revision prior to finalizing supply agreements.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring logic-level gate drive compatibility at 5 V or 10 V. Evaluate the thermal resistance values based on the specific copper pad size and FR-4 substrate dimensions used in the layout. Consider the peak current capability curves when designing for pulsed loads. Verify that the operating junction temperature remains within the specified limits during continuous operation.

FET, MOSFET Arrays Part Context

This device belongs to the UltraFET family from onsemi, designed for high-efficiency switching applications. The product line emphasizes low on-resistance and robust avalanche performance. The specific model integrates advanced trench technology to minimize conduction losses while maintaining reliable switching characteristics in compact surface-mount packages suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official replacement guide or contact technical support directly for verified cross-reference information.