HUFA76413DK8T

$1.05

Description：MOSFET 2N-CH 60V 5.1A 8SOIC
Series：UltraFET™

SKU:f7da4c7e891a Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

HUFA76413DK8T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 5.1A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HUFA76413DK8T

Description：MOSFET 2N-CH 60V 5.1A 8SOIC
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5.1A
Rds On (Max) @ Id, Vgs：49mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：620pF @ 25V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for HUFA76413DK8T

HUFA76413DK8T

FET, MOSFET Arrays Overview

The HUFA76413DK8T is a dual N-Channel Logic Level UltraFET power MOSFET manufactured using an advanced silicon process. It features a SO-8 surface-mount package with two independent channels. The device supports a drain-source voltage of 60V and continuous drain currents up to 5.1A at VGS=10V or 4.8A at VGS=5V. On-resistance is specified at 49mΩ (VGS=10V) and 56mΩ (VGS=5V). It operates within a temperature range of -55°C to +150°C, dissipates 2.5W of power, and includes unclamped inductive switching capability.

FET, MOSFET Arrays Feature Summary

Logic level gate drive enables direct control from low-voltage logic sources
Ultra-low on-resistance achieved through specialized UltraFET process technology
High avalanche energy handling capability for robust operation
Low reverse recovery time and stored charge in the intrinsic body diode

FET, MOSFET Arrays Applications

Switching regulators and DC-DC converters
Motor drivers and load control circuits
Relay drivers
Low-voltage bus switches
Power management in portable and battery-operated products

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type and pinout alignment before integration. Review thermal resistance data relative to specific PCB copper pad areas to ensure junction temperatures remain within safe operating limits during operation.

FET, MOSFET Arrays Selection Notes

Evaluate thermal requirements based on the specific mounting pad area and board layer configuration. Select appropriate gate resistors to manage switching speeds and minimize electromagnetic interference. Ensure the application voltage and current levels do not exceed the maximum ratings defined in the electrical characteristics table.

FET, MOSFET Arrays Part Context

This component belongs to the UltraFET family of power MOSFETs designed for high efficiency and low conduction losses. It utilizes Fairchild Semiconductor's proprietary process technology to optimize performance per silicon area. The part is intended for general-purpose switching applications requiring reliable operation in automotive and industrial environments.