RF Diode HUM2020B product image

HUM2020B

  • Description:RF DIODE PIN 2000V 13W AXIAL
  • Series:-

SKU:541e648363a1 Category: Brand:

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HUM2020B is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 2000V 13W AXIAL. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HUM2020B

  • Description:RF DIODE PIN 2000V 13W AXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):2000V
  • Current - Max:-
  • Capacitance @ Vr, F:4pF @ 100V, 1MHz
  • Resistance @ If, F:200mOhm @ 500mA, 4MHz
  • Power Dissipation (Max):13 W
  • Operating Temperature:-65°C ~ 175°C
  • Package / Case:Axial
  • Supplier Device Package:Axial
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for HUM2020B

HUM2020B

RF Diode Overview

The HUM2020B is a silicon PIN diode manufactured by Microchip Technology. It features a hermetic glass axial package designed for high-voltage applications. The component is rated for a breakdown voltage of 2000V, classifying it as a high-power RF switch or attenuator element. This device is suitable for environments requiring robust electrical isolation and reliable performance under extreme voltage conditions.

RF Diode Feature Summary

  • Hermetic glass axial construction ensures environmental sealing and long-term reliability
  • Silicon PIN diode technology provides stable switching characteristics in RF circuits
  • High breakdown voltage rating supports operation in demanding high-power systems

RF Diode Applications

  • High-voltage RF switching networks
  • RF signal attenuation control
  • Industrial microwave equipment
  • Test and measurement instrumentation

RF Diode Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation before procurement. Confirm that the hermetic seal integrity meets project requirements. Ensure compatibility with high-voltage handling protocols during assembly. Cross-reference datasheet revisions to confirm current manufacturing status and material compliance details.

RF Diode Selection Notes

Select this component when high-voltage isolation and hermetic sealing are critical design constraints. Evaluate thermal management needs due to power dissipation in RF applications. Consider package mounting orientation and lead forming requirements for automated assembly processes. Verify that the silicon PIN structure aligns with the required switching speed and capacitance specifications for the target frequency range.

RF Diode Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the high-power diode category. It complements other RF components used in signal processing chains. The hermetic packaging distinguishes it from standard plastic-packaged alternatives, targeting aerospace, military, or industrial sectors where environmental resilience is mandatory.

RF Diode Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may lack the hermetic seal or exact voltage ratings. Validate pinout compatibility and thermal characteristics before integrating alternative parts into existing designs.

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