HVC300C1TRU-E

HVC300C1TRU-E

$0.13
  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-

SKU:401eda30a078 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Capacitance @ Vr, F:-
  • Capacitance Ratio:-
  • Capacitance Ratio Condition:-
  • Voltage - Peak Reverse (Max):-
  • Diode Type:-
  • Q @ Vr, F:-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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HVC300C1TRU-E

Overview

The HVC300C1TRU-E is a variable capacitance diode manufactured by Renesas Electronics Corporation, designed for Very High Frequency (VHF) band applications. The device features a nominal diode capacitance of 50 pF with a tolerance of 6%. It operates within a reverse voltage range up to a minimum breakdown voltage of 34 V and exhibits a minimum diode capacitance ratio of 17. Constructed from silicon, the component utilizes an SC-79 package (R-PDSO-F2) configuration with two terminals.

Feature Summary

  • Optimized for tuning circuits in the Very High Frequency (VHF) band
  • High capacitance ratio supporting wide frequency adjustment ranges
  • Silicon-based construction ensuring stable performance characteristics

Applications

  • VHF radio receiver tuning circuits
  • Frequency synthesizer phase-locked loops
  • RF filter tuning networks

Procurement Notes

Verify the specific suffix 'TRU-E' against official Renesas documentation to confirm tape-and-reel packaging specifications and environmental compliance status. Ensure the ordering code matches the exact pinout and marking requirements for your assembly process. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a fixed-value capacitor cannot accommodate the required frequency sweep range in VHF designs. Evaluate the 50 pF nominal capacitance against the circuit's resonant frequency requirements. Confirm that the 34 V breakdown voltage exceeds the maximum expected reverse bias voltage in the application environment to prevent device failure.

Part Context

This component belongs to the Renesas discrete semiconductor portfolio, specifically within the variable capacitance diode category. It serves as a critical passive element in RF front-end modules where electronic tuning is preferred over mechanical varactors. The device supports legacy Hitachi/Renesas designations for VHF signal processing systems.

Replacement Considerations

Direct substitutes must match the 50 pF nominal capacitance, 34 V breakdown voltage, and SC-79 package dimensions. Verify that alternative varactor diodes offer comparable capacitance ratios and low series resistance at VHF frequencies to maintain circuit Q-factor and tuning linearity.

HVC300C1TRU-EHVC300C1TRU-E
$0.13
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