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IAUC120N04S6L008ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 120A 8TDSON-33. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUC120N04S6L008ATMA1
- Description：MOSFET N-CH 40V 120A 8TDSON-33
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.8mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：7910 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-33
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUC120N04S6L008ATMA1
Single FETs, MOSFETs Overview
The IAUC120N04S6L008ATMA1 is an OptiMOS™-6 N-channel enhancement mode power MOSFET designed for automotive applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 120 A at 25°C. The device achieves a maximum on-state resistance of 0.8 mΩ at VGS=10V. It supports a junction temperature up to 175°C, operates within -55°C to +175°C, and includes avalanche testing compliance.
Single FETs, MOSFETs Feature Summary
- OptiMOS™-6 technology optimized for automotive environments
- Logic-level gate drive capability
- AEC-Q101 qualified reliability standard
- High thermal robustness with 175°C operating limit
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- Low-side switching in vehicle electronics
- DC-DC converter stages
- Motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with PG-TDSON-8 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's material declaration before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and high current handling are required in compact surface-mount designs. The logic-level gate threshold simplifies driver interface design. Consider the thermal resistance characteristics for heat dissipation planning in enclosed automotive enclosures.
Single FETs, MOSFETs Part Context
This part belongs to the IAUC series of OptiMOS™-6 transistors. It utilizes silicon planar trench gate technology. The PG-TDSON-8 package provides efficient thermal transfer from junction to case. It represents a generation of devices focused on reducing conduction losses in automotive power management.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative OptiMOS™-6 variants like IAUC120N04S6L009 or IAUC120N04S6N009. Verify pinout compatibility and thermal resistance values before substitution. Ensure replacement parts meet the same AEC-Q101 qualification standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
