IAUC45N04S6N070HATMA1

FET, MOSFET Arrays Overview

The IAUC45N04S6N070H is an OptiMOS™-6 automotive power MOSFET featuring a dual N-channel half-bridge configuration in a PG-TDSON-8 package. It supports a maximum drain-source voltage of 40 V and a continuous drain current of 45 A at 25 °C. The device exhibits a maximum on-state resistance of 7.0 mΩ at VGS=10V and operates within a temperature range of -55 °C to +175 °C. Key electrical parameters include a typical gate charge of 9 nC, a junction-to-case thermal resistance of 3.7 K/W, and a pulsed drain current capability of 119 A.

FET, MOSFET Arrays Feature Summary

• Optimized for high-efficiency switching with low on-state resistance and fast dynamic characteristics
• Robust avalanche performance validated through 100% single-pulse avalanche testing
• Designed for automotive environments with extended operating temperature range up to 175 °C
• Integrated body diode with optimized reverse recovery characteristics for half-bridge applications

FET, MOSFET Arrays Applications

• Automotive half-bridge driver circuits
• DC-DC converter stages
• Motor control systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application environment before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing automotive circuits requiring a dual N-channel topology with a 40 V rating. Ensure the PCB layout accommodates the PG-TDSON-8 footprint and provides adequate copper area to manage the specified thermal resistance values effectively under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon OptiMOS™-6 family, which utilizes advanced trench technology to deliver superior power efficiency. The series is specifically engineered for demanding automotive electronics, offering a balance of low conduction losses and robust reliability features suitable for harsh operational environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameter alignment and package dimensions.