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IAUCN08S7N019ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V(. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUCN08S7N019ATMA1
- Description：MOSFET_(75V 120V(
- Series：OptiMOS™ 7
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：175A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-43
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUCN08S7N019ATMA1
Single FETs, MOSFETs Overview
The IAUCN08S7N019ATMA1 is an N-channel enhancement mode OptiMOS™ 7 power MOSFET designed for automotive applications. It features a PG-TDSON-8-43 package with a drain-source voltage (VDS) of 80 V and a maximum on-state resistance (RDS(on)) of 1.9 mΩ at VGS = 10 V. The device supports a continuous drain current of 175 A and a pulsed current of 596 A. It operates within a junction temperature range of -55°C to +175°C, complies with RoHS standards, and has undergone 100% avalanche testing.
Single FETs, MOSFETs Feature Summary
- OptiMOS™ 7 technology providing low RDS(on) and high power efficiency
- Extended qualification beyond AEC-Q101 with enhanced electrical testing
- Robust design validated through 100% avalanche testing
- MSL1 rating supporting up to 260°C peak reflow soldering
Single FETs, MOSFETs Applications
- General automotive applications
- Automotive braking solutions
- Electric power steering systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix ATMA1 against official Infineon documentation to confirm packaging details and marking codes. Ensure compatibility with PG-TDSON-8-43 footprint requirements during PCB layout. Confirm that the selected component meets the required AEC-Q101 automotive grade specifications for the target application environment.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring an 80 V N-channel MOSFET with optimized thermal performance in a compact surface-mount package. Consider the 1.9 mΩ RDS(on) specification for minimizing conduction losses in high-current circuits. Verify gate threshold voltage ranges align with the driving circuit capabilities for reliable switching operation.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 7 family from Infineon Technologies, engineered specifically for automotive environments. The series emphasizes robustness and efficiency, utilizing advanced trench gate technology. It serves as a replacement for previous generation automotive MOSFETs requiring similar voltage ratings and package constraints.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility with existing PG-TDSON-8-43 footprints. Verify that alternative devices meet or exceed the 80 V breakdown voltage and 1.9 mΩ maximum RDS(on) limits. Ensure any substitute also holds AEC-Q101 certification for automotive reliability.
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