IAUCN10S5L094DATMA1

$1.70

Description：MOSFET 2N-CH 100V 66A 8TDSON
Series：OptiMOS™ 5

SKU:f743fee20295 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IAUCN10S5L094DATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 66A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IAUCN10S5L094DATMA1

Description：MOSFET 2N-CH 100V 66A 8TDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：66A (Tj)
Rds On (Max) @ Id, Vgs：9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2180pF @ 50V
Power - Max：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PG-TDSON-8-60
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IAUCN10S5L094DATMA1

IAUCN10S5L094DATMA1

FET, MOSFET Arrays Overview

The IAUCN10S5L094D is an N-channel enhancement mode OptiMOS 5 automotive power MOSFET. It features a 100 V drain-source breakdown voltage and a maximum on-state resistance of 9.4 mΩ at VGS = 10 V. The device supports a continuous chip-limited drain current of 66 A and a pulsed current of 170 A. Operating temperatures range from -55°C to +175°C, with a thermal resistance junction-to-case of 1.6 K/W.

FET, MOSFET Arrays Feature Summary

Extended qualification beyond AEC-Q101 standards for automotive reliability
Logic level gate drive capability for efficient control
Robust design verified through 100% avalanche testing

FET, MOSFET Arrays Applications

General automotive applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'ATMA1' against official Infineon documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets all required automotive quality grades and RoHS compliance standards before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current handling in a compact PG-TDSON-8 package. Consider the low gate charge and fast switching characteristics for efficiency. Verify PCB layout requirements to achieve the specified thermal performance and ensure adequate heat dissipation for the target operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS 5 family, designed specifically for automotive environments. It utilizes silicon technology to provide enhanced electrical testing and robust performance under harsh conditions. The series is engineered to meet stringent industry standards for durability and reliability.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.