IAUCN10S5L280DATMA1

$1.18

Description：MOSFET 2N-CH 100V 23A 8TDSON
Series：OptiMOS™ 5

SKU:7cbaf835ac17 Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IAUCN10S5L280DATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 23A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IAUCN10S5L280DATMA1

Description：MOSFET 2N-CH 100V 23A 8TDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：23A (Tj)
Rds On (Max) @ Id, Vgs：28mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：690pF @ 10V
Power - Max：38W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PG-TDSON-8-61
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1

FET, MOSFET Arrays Overview

The IAUCN10S5L280DATMA1 is an automotive-grade N-channel enhancement-mode MOSFET from Infineon's OptiMOS™ 5 family. It features a 100 V drain-source breakdown voltage and a maximum on-state resistance of 28 mΩ at 10 V gate drive. The device supports a continuous chip-limited drain current of 23 A and operates within a junction temperature range of -55°C to +175°C. Packaged in a PG-TDSON-8-61 surface-mount footprint, it includes an integrated body diode with a forward voltage of 1.1 V max.

FET, MOSFET Arrays Feature Summary

Optimized for automotive applications with extended qualification beyond AEC-Q101 standards
Logic-level gate drive capability for efficient control interface integration
Robust thermal design supporting high power dissipation and elevated operating temperatures
100% avalanche tested to ensure reliability under transient stress conditions

FET, MOSFET Arrays Applications

General automotive electronic systems
Automotive power distribution networks
Low-side switching applications in vehicle electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel dimensions or tape specifications. Ensure that the component meets the required RoHS compliance and REACH SVHC status for your target market regulations before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a 100 V rated N-channel switch with low conduction losses in a compact surface-mount package. Consider the 28 mΩ RDS(on) limit for thermal management calculations and verify that the gate threshold voltage range aligns with the available logic-level drive signals in the system architecture.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 5 automotive portfolio, designed to deliver benchmark quality and robust performance for demanding vehicular environments. The technology combines trench MOSFET structures with advanced packaging to minimize footprint while maximizing current handling capabilities and thermal efficiency.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Do not assume compatibility based solely on pinout or voltage ratings; electrical parameters and thermal characteristics must match the original design requirements.