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IAUZN04S7N020ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(20V 40V). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUZN04S7N020ATMA2
- Description：MOSFET_(20V 40V)
- Series：OptiMOS™ 7
- Mfr：Infineon Technologies
- Package：Cut Tape (CT),Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2604 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-44
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUZN04S7N020ATMA2
Single FETs, MOSFETs Overview
The IAUZN04S7N020 is an automotive-grade N-channel enhancement-mode OptiMOS™ 7 power transistor. It features a maximum drain-source voltage of 40 V and a typical on-state resistance of 2.00 mΩ at 10 V gate drive. The device supports a chip-limited continuous drain current of 150 A and a pulsed current of 400 A. Operating temperature ranges from -55 °C to +175 °C. Total gate charge is typically 29 nC, with a threshold voltage range of 2.2 V to 3.0 V.
Single FETs, MOSFETs Feature Summary
- Extended qualification beyond standard AEC-Q101 requirements for enhanced reliability
- Robust design validated through 100% avalanche testing
- High thermal stability supporting operation up to 175 °C junction temperature
- MSL1 classification allowing tolerance for peak reflow temperatures up to 260 °C
Single FETs, MOSFETs Applications
- General automotive applications
- Automotive braking solutions
- Electric power steering systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'ATMA2' against Infineon documentation to confirm tape-and-reel packaging details and marking codes. Ensure compliance with RoHS standards and confirm that the PG-TSDSON-8-44 package footprint matches the target PCB layout. Validate that the component meets the required automotive quality level for the intended system environment.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage high-current automotive circuits requiring minimal conduction losses. The OptiMOS™ 7 technology provides superior switching performance compared to previous generations. Consider the 150 A chip-limited current rating when designing thermal management solutions for high-duty cycle operations.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 7 family, representing Infineon's latest trench technology for automotive power MOSFETs. It is designed to offer industry-leading figure-of-merit values within the 40 V category. The series targets applications demanding high efficiency and robustness in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as the IAUZP04S7N020 or other OptiMOS™ 7 variants with similar RDS(on) ratings. Verify pin compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
