ICPB1005-1-110I

Overview

The ICPB1005 is a discrete Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT) manufactured by ICONIC RF Ltd. It operates across a frequency range of DC to 14 GHz and is optimized for high power and efficiency using field plate technology. The device features a nominal pulsed P3dB output power of 45.5 dBm, with a maximum Power Added Efficiency (PAE) of 70% at 6 GHz and an 18 dB linear gain at the same frequency. It requires a drain bias of 28 V and has physical dimensions of 0.824 x 1.44 x 0.10 mm.

Feature Summary

• Utilizes GaN on SiC technology with field plate optimization for enhanced power and efficiency.
• Operates over a wide frequency spectrum from DC to 14 GHz.
• Designed for high-power applications with a nominal pulsed P3dB of 45.5 dBm.

Applications

• Aerospace & Defense
• Broadband Wireless

Procurement Notes

Verify the manufacturer as ICONIC RF Ltd, not Microchip Technology. Confirm the datasheet revision is Rev E. Ensure handling procedures for electrostatic discharge (ESD) are followed due to component sensitivity. Check that silver sintered epoxy attachment is used for mounting on CuMo carriers to meet thermal specifications.

Selection Notes

Select this component for designs requiring high-efficiency amplification in the DC-14 GHz range. Consider the 28V drain bias requirement and the need for specific impedance matching networks derived from load pull data. Evaluate thermal management capabilities against the specified channel temperature limits for both pulsed and continuous wave operations.

Part Context

This component is a discrete RF power transistor intended for integration into amplifier modules. Unlike packaged ICs, it is a bare die requiring specialized assembly techniques such as ball bonding and silver sintered epoxy attachment. It belongs to the category of wide-bandgap semiconductor devices designed for demanding RF environments.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet.

FAQ

What is the recommended method for die attach?

Silver sintered epoxy is recommended for attaching the component, assuming a thickness of 15um.

What are the preferred interconnect assembly techniques?

Ball bonding is the preferred technique, with a recommended aluminum wire diameter of 1.5 mil.

How should the device be biased up?

Set VG to -5V, set VD to 28V, then adjust VG positive until ID quiescent is 0.1A, limiting ID to 4A before applying RF signal.