ICPB1010-1-110I

$141.44

Description：DC-14 GHZ 50W DISCRETE GAN HEMT
Series：-

SKU:795087795afc Category: RF FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：DC-14 GHZ 50W DISCRETE GAN HEMT
Series：-
Mfr：Microchip Technology
Package：Box
Technology：GaN HEMT
Frequency：14GHz
Gain：6.1dB
Voltage - Test：28 V
Current Rating (Amps)：4A
Noise Figure：-
Current - Test：500 mA
Power - Output：50W
Voltage - Rated：28 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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ICPB1010-1-110I

Overview

The ICPB1010 is a discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN HEMT) manufactured by ICONIC RF Ltd. It operates across a frequency range of DC to 14 GHz and utilizes field plate technology for optimized power and efficiency. The device features a nominal pulsed P3dB output power of 48.5 dBm, with a maximum Power Added Efficiency (PAE) of 72% at 6 GHz. It requires a drain bias of 28 V and supports a maximum channel temperature of 225°C under continuous wave conditions.

Feature Summary

Operates from DC to 14 GHz using GaN on SiC technology
Optimized for high power and efficiency via field plate design
Capable of delivering approximately 50 watts of output power
RoHS compliant and lead-free construction

Applications

Aerospace & Defense systems
Broadband Wireless infrastructure

Procurement Notes

Verify the manufacturer designation as ICONIC RF Ltd rather than Microchip Technology when sourcing this component. Confirm that the engineering datasheet Rev E matches the required specifications. Ensure handling procedures strictly follow electrostatic discharge (ESD) precautions due to device sensitivity. Validate assembly guidance regarding silver sintered epoxy attachment and aluminum wire bonding parameters before integration.

Selection Notes

Select this component for applications requiring wideband operation up to 14 GHz with high linearity. Consider the specific impedance matching requirements provided in the load pull data for target frequencies. Evaluate thermal management capabilities against the specified maximum channel temperature limits. Assess the suitability of the die dimensions and bond pad layout for the intended carrier substrate and interconnect assembly methods.

Part Context

This component belongs to the category of discrete power RF transistors. It is specifically designed as a high-power amplifier element within the broader class of wide-bandgap semiconductor devices. The ICPB1010 serves as a critical active component in RF front-end modules where high efficiency and broad bandwidth are primary design constraints.