ICPB1020-1-110I

Overview

The ICPB1020 is a discrete Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT) engineered for high-power radio frequency applications. It operates across a DC to 14 GHz frequency range with a nominal pulsed P3dB output power of 51.5 dBm. The device utilizes field plate technology to optimize power and efficiency, achieving a maximum Power Added Efficiency (PAE) of 71% at 6 GHz and an 18 dB linear gain at the same frequency. Designed for robust performance, it supports a drain bias of 28 V and features a compact chip dimension of 0.82 x 4.56 x 0.10 mm.

Feature Summary

• Operates from DC to 14 GHz using GaN on SiC technology
• Optimized for high power and efficiency via field plate design
• Supports up to 51.5 dBm nominal pulsed output power
• Lead-free and RoHS compliant construction

Applications

• Aerospace & Defense systems
• Broadband Wireless infrastructure

Procurement Notes

Verify the manufacturer designation carefully, as this component is produced by ICONIC RF Ltd, not Microchip Technology. Confirm that the specific engineering datasheet revision matches your design requirements. Ensure all handling procedures, particularly regarding electrostatic discharge and die attach methods, are strictly followed during assembly to prevent permanent damage to the sensitive semiconductor structure.

Selection Notes

Select this component when designing wideband amplifiers requiring high linearity and efficiency in the microwave spectrum. Consider the thermal management capabilities required to maintain channel temperatures below the maximum limit of 225°C under continuous wave conditions. Evaluate the need for specialized interconnect assembly techniques, such as ball or wedge bonding, to ensure reliable electrical connections within the circuit layout.

Part Context

This device belongs to the class of discrete power GaN HEMTs designed for demanding RF environments. Unlike integrated circuits, this bare die requires custom mounting and bonding. Its architecture focuses on maximizing power density and reliability for critical communication and radar systems where standard silicon devices cannot meet performance thresholds.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the recommended method for die attachment?

Silver sintered epoxy is recommended for adhesive attachment, while flux-less gold-tin preforms are preferred for eutectic bonding.

How should the device be biased up?

Set the gate voltage to -5V, apply 28V to the drain, adjust the gate voltage positively until the desired quiescent current is achieved, and then apply the RF signal.

Is aluminum wire bonding suitable for this component?

No, aluminum wire bonding is not recommended; ball bonding and wedge bonding are the preferred interconnect assembly techniques.