IF170DST3TR

IF170DST3TR

$1.79
  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170

SKU:a04a63dcb16e Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170
  • Mfr:InterFET
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):22 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 10V
  • Resistance - RDS(On):38 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IF170DST3TR

Overview

The InterFET IF170DST3TR is an N-Channel JFET utilizing the N0132L geometry, housed in a SOT-23 surface-mount package. It features a typical noise voltage of 1.0 nV/√Hz and a typical forward transconductance of 6 mS at VDS = 15V and ID = 1mA. The device supports a maximum reverse gate-source voltage of -30V and continuous power dissipation of 350 mW. Static characteristics include a gate-to-source cutoff voltage range of -0.2V to -2.0V and a drain-to-source saturation current (IDSS) ranging from 18.0 mA to 30.0 mA. This specific part number denotes the bulk bin variant packaged in a 7-inch or 13-inch tape and reel configuration.

Feature Summary

  • Utilizes InterFET N0132L geometry for low noise performance
  • High radiation tolerance suitable for demanding environments
  • RoHS, REACH, and CMR compliant manufacturing
  • Edge case SPICE modeling available for simulation

Applications

  • General amplifiers and oscillators
  • Military radar and satellite communications systems
  • Medical imaging and ultrasound equipment
  • Audio tone control circuits and headphone amplifiers

Procurement Notes

Verify the ordering suffix 'TR' corresponds to the required tape and reel quantity, as the datasheet specifies availability in 7-inch reels (1,000 or 3,000 pieces) and 13-inch reels (9,000 pieces). Confirm that the standard bulk bin selection aligns with design requirements, noting that custom test and binning options are available directly through InterFET for specialized applications.

Selection Notes

Select the IF170DST3TR when a higher IDSS range (18.0 mA to 30.0 mA) is required compared to the A, B, or C variants. Ensure the SOT-23 package thermal derating of 2.8 mW/°C is accounted for in the PCB layout. Verify compatibility with existing land patterns, noting that source and drain pins are interchangeable in this package.

Part Context

This component belongs to the IF170A-B-C-D series of N-Channel JFETs designed for sensitive mid-frequency amplifier stages. The IF170D variant specifically targets applications requiring higher saturation currents. It serves as a direct industry standard cross-reference replacement for parts such as the 2SK152, 2SK170, and 2N6451.

Replacement Considerations

Publicly confirmed substitutes include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, MMBF4393, NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Designers should validate pinout compatibility and electrical parameter margins against these listed industry standard crosses.

IF170DST3TRIF170DST3TR
$1.79
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