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The IFF750B12ME7_B11 is an EconoDUAL™3 module featuring TRENCHSTOP™ IGBT7 technology and emitter-controlled diodes. It provides a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 750 A at 95 °C case temperature, and a repetitive peak collector current of 1500 A. The module integrates a PressFIT contact system, an NTC thermistor with a typical resistance of 5 kΩ at 25 °C, and a current sense shunt rated at 0.169 mΩ. Thermal resistance from junction to case is 0.052 K/W for the IGBT and 0.101 K/W for the diode.
Verify component authenticity by checking the Data Matrix barcode on the module label against official Infineon records. Confirm that the part number matches IFF750B12ME7_B11 exactly. Ensure the package integrity is intact and free from mechanical damage before installation. Cross-reference the production date code with supply chain documentation to validate component age and storage conditions.
Select this module for high-current industrial applications requiring integrated sensing capabilities. The 1200 V rating supports standard three-phase inverter topologies. Verify that the gate driver selection aligns with the recommended Infineon drivers listed in the datasheet. Ensure the cooling system design accommodates the specified thermal resistances and mounting torque requirements for reliable operation.
This component belongs to the EconoDUAL™3 family, which utilizes TRENCHSTOP™ IGBT7 technology. The series offers high power density and robust mechanical construction suitable for industrial environments. The module is qualified for industrial applications according to IEC standards and features an isolated base plate for enhanced safety and electrical isolation.
Direct replacements within the same family include FF750B12ME7_B11. Other variants in the EconoDUAL™3 lineup may require verification of integrated sensor compatibility and exact current ratings.