SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The InterFET IFN160BST3 is an N-channel JFET utilizing the N107A geometry, housed in a surface-mount SOT-23 package. It features a gate-to-source breakdown voltage of -75V and a typical gate leakage current of 3.0pA at 20V. The device exhibits a low input capacitance of 4pF and a forward transconductance ranging from 1500µS to 1500µS. Drain-to-source saturation current varies between 1mA and 3mA, with a cutoff voltage typically around -1.0V. Designed for high radiation tolerance, it supports continuous power dissipation up to 350mW and operates within a junction temperature range of -55°C to 150°C.
Verify the specific binning code associated with the BST3 suffix against the official datasheet to confirm exact electrical parameter ranges. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors before finalizing procurement specifications.
Select this component when low noise and high radiation resistance are required in a compact SMT form factor. Ensure the design accommodates the interchangeable source and drain pins inherent to the N107A geometry. Verify that the operating voltage remains within the -75V gate-to-source breakdown limit.
This part belongs to the IFN160 family, which includes variants A, B, and C differentiated by specific parameter bins. It serves as a direct cross-reference for industry-standard parts like the 2SK160 and BF510. The product line offers both bulk and tape-and-reel packaging options for flexible integration.
Publicly documented equivalents include the 2SK160, BF510, BF511, J305, and MMBFJ202. Verify pinout compatibility and thermal characteristics when substituting these components in existing designs.
Yes, the documentation explicitly notes that the source and drain pins are interchangeable due to the specific device geometry.
The typical gate leakage current is 3.0pA at 20V.
Yes, InterFET provides edge case SPICE modeling for this component series.