ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-Channel -50V Low Ciss
- Series：IFN160
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：50 V
- Current - Drain (Idss) @ Vds (Vgs=0)：6 mA @ 5 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.3 V @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：290 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The IFN160CST3 is an N-channel JFET from InterFET, utilizing the N107A geometry and packaged in a surface-mount SOT-23 (TO-236AB) configuration. It features a gate-to-source breakdown voltage of -75V and a typical gate leakage current of 3.0pA at 20V. The device exhibits a low input capacitance of 4pF and a forward transconductance ranging from 1500µS to 1500µS. The drain-to-source saturation current spans up to 6mA, with a continuous power dissipation rating of 350mW. Operating junction temperatures range from -55°C to 150°C.
Feature Summary
- Utilizes InterFET N107A geometry for high radiation tolerance
- Features extremely low gate leakage and minimal input capacitance
- Provides exact cross-compatibility with industry standard 2SK160 JFETs
- Supports both surface mount and bare die package options
Applications
- Audio tone control circuits and microphone impedance transformation
- Radar and communication systems for military and aerospace applications
- Medical imaging systems and ultrasound equipment
- High impedance switches and signal mixers
Procurement Notes
Verify the specific suffix 'ST3' confirms the bulk packaging format within the SOT-23 case. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors before finalizing procurement plans. Ensure thermal management aligns with the specified derating values during operation.
Selection Notes
Select the IFN160CST3 variant when higher drain-to-source saturation currents are required compared to the A or B binning options. Evaluate the low cutoff voltage characteristics for precise biasing in audio preamplifier designs. Consider the interchangeable source and drain pins for simplified PCB layout strategies in space-constrained surface mount applications.
Part Context
This component belongs to the IFN160A-B-C family of N-channel JFETs manufactured by InterFET. The series is engineered for cost-sensitive, low-noise designs, particularly targeting audio and medical instrumentation markets. The IFN160C represents one of several binning options available within this product line, offering distinct electrical parameter ranges.
Replacement Considerations
Public documentation identifies the 2SK160 as an exact cross-reference. Other compatible parts include BF510, BF511, J305, MMBFJ202, 2N4339, 2N4340, 2N4302, J202, and 2N5484. Verify pinout compatibility and electrical limits against these alternatives before implementation.
FAQ
Are the source and drain pins interchangeable?
Yes, the datasheet explicitly notes that the source and drain pins are interchangeable.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
Does the device support tape and reel packaging?
Yes, while the ST3 suffix indicates bulk packaging, the IFN160CST3TR variant is available in tape and reel formats.
