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Product Detailed Parameters
- Description：IGBT MOD 1200V 400A 940W
- Series：MIPAQ™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：400 A
- Power - Max：940 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The IFS200B12N3E4_B31 is a MIPAQ™ base module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE Diode technology. It includes an integrated NTC thermistor and shunt resistor. The collector-emitter voltage (VCES) is 1200 V, with a nominal continuous DC collector current of 200 A at TC = 90°C. The repetitive peak collector current reaches 400 A. Typical saturation voltage (VCEsat) is 1.75 V at Tvj = 25°C. The module supports a maximum junction temperature of 150°C during switching operations.
Feature Summary
- Integrated NTC thermistor for precise thermal monitoring
- Built-in shunt resistor for direct current measurement
- Isolated copper base plate for enhanced safety
- High power and thermal cycling capability
Applications
- Motor drives
- Servo drives
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component matches the specific technical requirements for your application before procurement. Cross-reference datasheet revision numbers to guarantee compatibility with existing designs.
Selection Notes
Evaluate the thermal resistance values and mounting torque specifications carefully. Ensure the gate drive circuitry aligns with the internal gate resistor and recommended operating conditions. Consider the stray inductance and short-circuit withstand capability when designing the power stage layout.
Part Context
This component belongs to the Infineon IGBT module family utilizing IGBT4 technology. It is designed for industrial applications requiring high reliability and efficiency. The module integrates advanced features like current sensing and thermal protection within a standard housing format.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Ensure any replacement part maintains identical electrical ratings, pinout configurations, and mechanical dimensions. Verify thermal characteristics and packaging compatibility before implementation.
FAQ
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) is 1.65 V at Tvj = 125°C and 1.70 V at Tvj = 25°C.
What is the rated resistance of the integrated shunt?
The rated resistance (R20) of the shunt is 1.50 mΩ at Tc = 20°C.
What is the isolation test voltage of the module?
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
