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The IGA30N60H3XKSA1 is a high-speed switching third-generation IGBT utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V, a continuous collector current of 18 A at 25°C, and a maximum junction temperature of 175°C. The device exhibits a typical saturation voltage of 1.95 V at 25°C and 30 A. Switching characteristics include a turn-on energy of 0.73 mJ and a turn-off energy of 0.44 mJ under standard test conditions.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm availability through authorized distributors as this component may be subject to lifecycle changes. Ensure thermal management design accounts for the specified thermal resistance values in the datasheet.
Select this component for applications requiring fast switching speeds and low conduction losses within a 600V rating. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate gate resistor requirements to optimize switching performance and minimize electromagnetic interference during operation.
This part belongs to the IGA30N60 series from Infineon Technologies, representing the third generation of high-speed IGBTs. It is designed for industrial power control applications where efficiency and switching speed are critical parameters.
Public confirmed substitute part numbers: None identified.