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The Infineon IGB20N60H3ATMA1 is a high-speed IGBT utilizing Trench and Fieldstop technology. It features a 600V collector-emitter voltage rating and a 20A DC collector current at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and is housed in a PG-TO263-3 package. Key electrical parameters include a typical VCEsat of 1.95V at 25°C, turn-off energy (Eoff) of 0.24mJ, and fall time (tf) of 11ns under standard test conditions.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the PG-TO263-3 package outline dimensions provided in the datasheet. Confirm RoHS compliance and Pb-free status as stated in the feature list before finalizing procurement specifications.
Select this component for applications requiring fast switching speeds and low electromagnetic interference. The 175°C junction temperature rating allows for operation in higher thermal environments compared to standard devices. Consider the 600V blocking voltage and 20A continuous current limits when designing the power stage circuitry.
This part belongs to Infineon's third-generation high-speed switching series. It utilizes Trench and Fieldstop technology to optimize performance metrics such as saturation voltage and switching losses. The device is designed for industrial power control applications where efficiency and thermal robustness are critical requirements.
Check for direct pin-compatible substitutes within the same Infineon H3 series family. Verify that any replacement maintains the 600V rating and similar switching characteristics. Consult the official product spectrum list for alternative packages or current ratings if exact match is unavailable.
The device can withstand a short circuit for up to 5µs at a junction temperature of 150°C.
The maximum allowable gate-emitter voltage is ±20V.
Yes, it is available in the PG-TO263-3 package suitable for surface mounting.