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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.07V @ 15V, 15A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IGC18T120T8LX1SA2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It belongs to the TrenchStop series and utilizes Trench Field Stop technology for optimized switching performance. The device features a maximum collector-emitter breakdown voltage of 1200 V and a pulsed collector current rating of 45 A. Designed for high-efficiency power applications, it is supplied in a bulk die format, specifically described as SAWN ON FOIL, which facilitates integration into custom or standard power modules.
Feature Summary
- Incorporates Trench Field Stop technology for enhanced electrical characteristics
- Part of the TrenchStop series designed for improved efficiency
- Engineered for robust operation in high-voltage power conversion environments
Applications
- Industrial motor drives and control systems
- High-frequency power supply designs
- Uninterruptible power supply (UPS) units
- Welding equipment power stages
Procurement Notes
Verify the specific die configuration and foil attachment requirements during component sourcing. Ensure that the procurement process accounts for the bulk package type, which requires appropriate handling procedures. Confirm that the active status aligns with long-term production availability needs for the intended manufacturing timeline.
Selection Notes
Select this component when a 1200 V blocking capability and 45 A pulsed current handling are required within a compact die form factor. The TrenchStop technology offers advantages in switching losses compared to conventional structures. Evaluate thermal management solutions compatible with the SAWN ON FOIL mounting style to ensure reliable junction temperature operation under load.
Part Context
Infineon Technologies produces a broad portfolio of power semiconductors, including IGBTs and MOSFETs, targeting automotive, industrial, and consumer electronics markets. The IGC18T120T8LX1SA2 represents the company's focus on high-voltage power control solutions. This specific part integrates advanced trench technologies to meet stringent efficiency standards in modern power electronic converters.
Replacement Considerations
Consult official Infineon documentation for direct pin-compatible or functionally equivalent alternatives within the TrenchStop family. Verify that any substitute maintains the 1200 V rating and comparable pulsed current capabilities while matching the die package specifications.
