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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 40A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IGC41T120T8QX7SA2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a Trench Field Stop technology architecture designed for high-efficiency power switching applications. The device supports a maximum collector-emitter breakdown voltage of 1200 V and handles a continuous collector current of 40 A, with a pulsed current capability of 120 A. Packaged in a bulk configuration suitable for die-level integration, this component operates within standard industrial temperature ranges and is classified as an active product.
Feature Summary
- Utilizes Trench Field Stop technology to optimize switching performance and reduce conduction losses.
- Engineered for robust operation with a 1200 V collector-emitter breakdown voltage rating.
- Designed for high-current applications supporting up to 40 A continuous collector current.
Applications
- Industrial motor drives and control systems
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific package type and thermal characteristics required for your application, as this component is supplied in a bulk die format. Ensure that the mounting process aligns with the mechanical specifications for bare dies. Confirm compatibility with your gate drive circuitry regarding voltage thresholds and current requirements before finalizing procurement.
Selection Notes
Select this IGBT when a 1200 V rating and 40 A continuous current capacity are required for power conversion tasks. The Trench Field Stop technology makes it suitable for applications demanding efficient switching and low on-state voltage. Consider the bulk packaging format if integrating the die directly into custom modules or specialized power assemblies rather than using pre-packaged discrete units.
Part Context
This component belongs to Infineon's portfolio of single IGBTs, specifically utilizing their proprietary TrenchStop™ technology. It is part of the broader category of power semiconductors used in medium-to-high power electronic systems. The product line focuses on delivering reliable performance in demanding electrical environments, serving as a key element in modern power management solutions.
Replacement Considerations
Check for direct substitutes within the Infineon TrenchStop™ series that match the 1200 V / 40 A specifications. Verify pinout and thermal pad configurations if replacing with packages from other manufacturers, as die-level components require precise mechanical alignment during installation.
FAQ
What is the maximum pulsed collector current for this IGBT?
The maximum pulsed collector current (Icm) for the IGC41T120T8QX7SA2 is 120 A.
Does this component use Trench or Planar technology?
This IGBT utilizes Trench Field Stop technology, which is designed to offer improved switching characteristics compared to traditional planar structures.
